Electrical Properties of Plasma-assisted Cvd Deposited Thin Silicon Oxynitride Films
نویسندگان
چکیده
The electrical properties of MIS structures with silicon oxynitride films, deposited at 200 C in a RF-plasma CVD reactor using Si(OC2H5)4 (TEOS) as a precursor and nitrogen as the gas ambient have been studied. The analysis of the capacitance-voltage and current–voltage characteristics has shown that a larger DC bias yields larger densities of dielectric charge and interface traps in the growing films, and therefore, a lower specific resistivity of the SiOxNy films.
منابع مشابه
A Study of ZnO Buffer Layer Effect on Physical Properties of ITO Thin Films Deposited on Different Substrates
The improvement of the physical properties of Indium Tin Oxide (ITO) layers is quite advantageous in photovoltaic applications. In this study the ITO film is deposited by RF sputtering onto p-type crystalline silicon (c-Si) with (100) orientation, multicrystalline silicon (mc-Si), and glass substrates coated with ZnO and annealed in vacuum furnace at 400°C. Electrical, optical, structural a...
متن کاملInfluence of O2 and N2 Concentrations on the Characteristics of Plasma in DC Cylindrical Magnetron Discharge by Langmuir Probe
Using the Langmuir probe method, the reactive plasma parameters were studied in different ratios of oxygen and nitrogen concentrations in a DC cylindrical discharge device.The plasma parameters such as plasma potential, electron density and electron temperature wereextracted from the current-voltage characteristic’s curve of Langmuir probe to find the optimum conditions for deposit the oxy...
متن کاملLithium phosphorous oxynitride films synthesized by a plasma-assisted directed vapor deposition approach
A plasma-assisted directed vapor deposition approach has been explored for the synthesis of lithium phosphorous oxynitride Lipon thin films. A Li3PO4 source was first evaporated using a high voltage electron beam and the resulting vapor entrained in a nitrogen-doped supersonic helium gas jet and deposited on a substrate at ambient temperature. This approach failed to incorporate significant con...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کاملStructural, Electrical and Optical Properties of Molybdenum Oxide Thin Films Prepared by Post-annealing of Mo Thin Films
Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
متن کامل